The test is applicable for evaluation, screening, monitoring, and/or qualification of all solid state devices. The high temperature storage test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure mechanisms and time-to failure distributions of solid state electronic devices, including non-volatile memory devices (data retention failure mechanisms). Thermally activated failure mechanisms are modelled using the Arrhenius Equation for acceleration. During the test, accelerated stress temperatures are used without electrical conditions applied.